Samsung PM863 240 Gigabyte SSD Review


Published by Marc Büchel on 10.02.16 (12710 reads)
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[de]Neben der SM863 Serie hat Samsung vor kurzem auch die PM863 Serie vorgestellt. Die dieser Modellreihe angehörenden Laufwerke sind mit TLC-3D-V-NAND-Speicher bestückt. Dementsprechend empfiehlt der Hersteller den Einsatz in lese-intensiven Umgebungen, um möglichst sorgfältig mit Schreibzyklen umzugehen, wobei die Lebensdauer zum Vorgänger aber deutlich gesteigert werden konnte. Dank der Verwendung von TLC-Speicher ist Samsung aber auch in der Lage, den Preis für diese Laufwerke extrem tief anzusetzen. Insgesamt sind wir gespannt wie dieses Laufwerk sich durch unser Review kämpft. [/de][en]Next to the SM863 Samsung has also launched the PM863 series. This drive is equipped with TLC 3D-V-NAND flash memory chips and therefore it's suitable for read-intensive workloads, preserving precious write cycles. Nevertheless, compared to the predecessor endurance has been improved by factors. Furthermore TLC NAND allows for a highly competitive pricing, which you will get with this drive. Overall we're curious to see how this drive is going to perform. [/en][fr]Next to the SM863 Samsung has also launched the PM863 series. This drive is equipped with TLC 3D-V-NAND flash memory chips and therefore it's suitable for read-intensive workloads, preserving precious write cycles. Nevertheless, compared to the predecessor endurance has been improved by factors. Furthermore TLC NAND allows for a highly competitive pricing, which you will get with this drive. Overall we're curious to see how this drive is going to perform. [/fr][it]Il nuovo PM863 di Samsung appartiene alla nuova generazione di prodotti enterprise dell'azienda. Questa unità utilizza TLC 3D-V-NAND ed è specificatamente studiato per quei sistemi che richiedono un grosso lavoro di lettura. Rispetto al precedente modello, la nuova unità offre un maggiore spazio di archiviazione e una durata più elevata. In conclusione, siamo molto curiosi di analizzare a fondo anche questa unità.[/it]





[de]Spezifikationen / Lieferumfang[/de][en]Specifications / Delivery[/en][fr]Spécifications / Bundle[/fr][it]Specifiche / Bundle[/it]


[de]Modell[/de][en]Model[/en][fr]Modèle[/fr][it]Modello[/it] PM863 240 GB PM863 480 GB PM863 960 GB PM863 1.92 TB PM863 3.84 TB
[de]Kapazität[/de][en]Capacity[/en][fr]Capacité[/fr][it]Capacità[/it] 240 GB 480 GB 960 GB 1.92 TB 3.84 TB
[de]Formfaktor[/de][en]Form Factor[/en][fr]Format[/fr][it]Form Factor[/it] 2.5'' 2.5'' 2.5'' 2.5'' 2.5''
[de]Controller[/de][en]Controller[/en][fr]Contrôleur[/fr][it]Controller[/it] Samsung Mercury Samsung Mercury Samsung Mercury Samsung Mercury Samsung Mercury
[de]Speicher[/de][en]Memory[/en][fr]Mémoire[/fr][it]Memoria[/it]
  • TLC NAND
  • 3D V-NAND 32 Layer
  • TLC NAND
  • 3D V-NAND 32 Layer
  • TLC NAND
  • 3D V-NAND 32 Layer
  • TLC NAND
  • 3D V-NAND 32 Layer
  • TLC NAND
  • 3D V-NAND 32 Layer
[de]Durchsatz[/de][en]Throughput[/en][fr]Débits[/fr][it]Throughput[/it]
  • 520 MB/s sequential read
  • 245 MB/s sequential write
  • 99'000 IOPS 4K random read
  • 10 '000 IOPS 4K random write
  • 525 MB/s sequential read
  • 460 MB/s sequential write
  • 99'000 IOPS 4K random read
  • 17 '000 IOPS 4K random write
  • 520 MB/s sequential read
  • 475 MB/s sequential write
  • 99'000 IOPS 4K random read
  • 18 '000 IOPS 4K random write
  • 510 MB/s sequential read
  • 475 MB/s sequential write
  • 99'000 IOPS 4K random read
  • 18 '000 IOPS 4K random write
  • 540 MB/s sequential read
  • 480 MB/s sequential write
  • 99'000 IOPS 4K random read
  • 18 '000 IOPS 4K random write
QOS 4KB, QD32 (99.99%)
  • 0.6 ms read
  • 5.0 ms write
  • 0.6 ms read
  • 7.0 ms write
 
  • 0.6 ms read
  • 5.0 ms write
 
Latency
  • 55 us sequential read
  • 45 us sequential write
  • 115 us random read
  • 55 us random write
  • 55 us sequential read
  • 45 us sequential write
  • 115 us random read
  • 55 us random write
  • 55 us sequential read
  • 45 us sequential write
  • 115 us random read
  • 55 us random write
  • 55 us sequential read
  • 45 us sequential write
  • 115 us random read
  • 55 us random write
 
[de]Stromverbrauch[/de][en]Power Consumption[/en][fr]Consommation[/fr][it]Consumo[/it]
  • 2.7 Watt write
  • 3.8 Watt write
  • 3.8 Watt write
  • 3.8 Watt write
  • 4.1 Watt write
[de]Lebensdauer[/de][en]Endurance[/en][fr]Endurance[/fr][it]Durata[/it]

350 TBW

700 TBW 1400 TBW 2800 TBW 5600 TBW
[de]Garantie[/de][en]Warranty[/en][fr]Garantie[/fr][it]Garanzia[/it] 3 [de]Jahre[/de][en]Years[/en][fr]Ans[/fr][it]Anni[/it] 3 [de]Jahre[/de][en]Years[/en][fr]Ans[/fr][it]Anni[/it] 3 [de]Jahre[/de][en]Years[/en][fr]Ans[/fr][it]Anni[/it] 3 [de]Jahre[/de][en]Years[/en][fr]Ans[/fr][it]Anni[/it] 3 [de]Jahre[/de][en]Years[/en][fr]Ans[/fr][it]Anni[/it]
[de]Preis[/de][en]Price[/en][fr]Prix[/fr][it]Prezzo[/it]





[de]Vor nunmehr einigen Monaten kündigte Samsung zwei neue SSD-Serien für Rechenzentren an, wobei es sich zum einen um die PM863 für leseintensive Workloads sowie die SM863 für schreibintensive Umgebungen handelt. In diesem Review nehmen wir uns der PM863 mit 240 Gigabyte an und als erstes wollen wir kurz auf die Kernfeatures eingehen. Samsung hat dieses Drive mit einer Advanced ECC Engine versehen sowie einer End-to-End-Data-Protection. Im Zusammenspiel können somit jegliche Diskrepanzen im Datenpfad entdeckt und eliminiert werden. Ebenfalls mit an Bord ist eine Power-Loss-Protection, wobei Tantalum-Kondesatoren bei einem Stromausfall in der Lage sind ausreichend Energie bereit zu stellen, sodass jegliche, sich im Cache befindliche Daten in den NAND-Flash-Speicher geschrieben werden können. Ebenso relevant für den Einsatz in einem Rechenzentrum ist ein Überhitzungsschutz. Sollte das PM863 Drive zu heiss werden, dass wird automatisch der Kerntakt des Controllers reduziert, was letztlich eine Temperaturreduktion zur Folge hat.

Arbeiten wir uns ins Innere dieses Drives vor, dann finden wir hier 3-bit TLC V-NAND, wobei der Speicher, wie bei Samsung-Drives üblich, in-house hergestellt wird. Genauer gesagt kommt beim hier vorliegenden Drive 3D-V-NAND Chips mit 32 Layern zum Einsatz, was für eine Speicherdicht pro Package von 128 Gbit sorgt. Berechnet man auf diesen Angaben basierend die Gesamtkapazität des hier vorliegenden 240GB-Drives, dann erhalten wir 256GB. In anderen Worten implementiert Samsung standardmässig ein 7-prozentiges Overprovisioning. Das sorgt zum einen für gesteigerte Performance sowie zum anderen für höhere Werte bezüglich der Lebensdauer, da die NAND-Chips im Endeffekt weniger schnell abgenutzt werden.

Gehen wir auf die weiteren Details ein, dann bekommen wir bei diesem Drive einen Samsung Mercury Controller zu Gesicht. Dabei handelt es sich um den Nachfolger, des MDX-Controllers, der auf dem Vorgänger Samsung 845DC Evo zum Einstaz kam. Der neue Controller bietet, neben leicht gesteigerter Performance den Vorteil, dass er deutlich mehr Speicher verwalten kann. So kommt es dann auch, dass Samsung PM863 Drives mit bis zu 3.84 TB Kapazität realisieren kann. [/de][en]A few months ago Samsung announced two new series of SSDs suitable for the use in data centers. One of which is the PM863 and the other is called the SM863. Whereas the PM863 is recommended for read-intensive workloads (webservers, streaming services, …), the SM863 is designed for read-intensive environments such as OLTP databases. In this review we’re going to have a look at the PM863 with 240 Gigabyte capacity and first of all we want to have look at this drives key features. Let’s start with the Advanced ECC Engine, which, in combination with the End-to-End-Data protection makes sure that any discrepancies in the data path are eradicated in-flight. Apart from that there is also a power loss protection features. In the case of an unexpected power failure, the tantalum capacitors on the PCB provide enough power that data in the DRAM cache can be written into the NAND flash memory, which means no data will be lost. What can be mission-critical in a datacenter as well is overheat protection. If the PM863 ever gets too hot the main controller automatically down clocks, which results in lower temperatures.

If we open the drive we find 3-bit TLC V-NAND flash memory. As always with drives from Samsung these chips a manufactured in-house. To be a bit more precise on these chips, Samsung is using 3D-V-NAND with 32 Layers. Per package they offer a storage density of 128 Gbit. If we do the maths, we realize that there is 256GB of storage on this particular 240GB drive available. This means Samsung has put a 7 percent overprovisioning in place. Overprovisioning in general helps to increase performance as well as endurance, since the tear and wear on the NAND flash chips can be reduced.

Even more in detail we find a new Samsung Mercury controller, which is the successor of the MDX controller. The latter has been used in the predecessor of the PM863, the 845DC Evo. Comparing the two controllers, one of its main advantages is the fact, that Mercury can address more NAND Flash. That’s actually why there are PM863 Drives with up to 3.84 TB capacity available.[/en][fr]A few months ago Samsung announced two new series of SSDs suitable for the use in data centers. One of which is the PM863 and the other is called the SM863. Whereas the PM863 is recommended for read-intensive workloads (webservers, streaming services, …), the SM863 is designed for read-intensive environments such as OLTP databases. In this review we’re going to have a look at the PM863 with 240 Gigabyte capacity and first of all we want to have look at this drives key features. Let’s start with the Advanced ECC Engine, which, in combination with the End-to-End-Data protection makes sure that any discrepancies in the data path are eradicated in-flight. Apart from that there is also a power loss protection features. In the case of an unexpected power failure, the tantalum capacitors on the PCB provide enough power that data in the DRAM cache can be written into the NAND flash memory, which means no data will be lost. What can be mission-critical in a datacenter as well is overheat protection. If the PM863 ever gets too hot the main controller automatically down clocks, which results in lower temperatures.

If we open the drive we find 3-bit TLC V-NAND flash memory. As always with drives from Samsung these chips a manufactured in-house. To be a bit more precise on these chips, Samsung is using 3D-V-NAND with 32 Layers. Per package they offer a storage density of 128 Gbit. If we do the maths, we realize that there is 256GB of storage on this particular 240GB drive available. This means Samsung has put a 7 percent overprovisioning in place. Overprovisioning in general helps to increase performance as well as endurance, since the tear and wear on the NAND flash chips can be reduced.

Even more in detail we find a new Samsung Mercury controller, which is the successor of the MDX controller. The latter has been used in the predecessor of the PM863, the 845DC Evo. Comparing the two controllers, one of its main advantages is the fact, that Mercury can address more NAND Flash. That’s actually why there are PM863 Drives with up to 3.84 TB capacity available.[/fr][it]Alcuni mesi fa Samsung ha annunciato due nuovi SSD studiati per un utilizzo nei data center. I due modelli prendono il nome di PM863 e SM863, il primo è raccomandato per letture intense come webserver o servizi di streaming mentre il secondo è più indicato per database OLTP. In questa recensione andremo ad analizzare il PM863 da 240GB ma prima di iniziare vogliamo mostrarvi tutte le principali caratteristiche. L'unità dispone di un sistema avanzato di controllo composto da un sistema ECC abbinato ad una protezione End-to-end-data in grado di localizzare possibili errori in diretta. In aggiunta sono presenti numerose protezioni legate ad eventuali sbalzi di corrente o perdita di dati. In caso di problemi, i condensatori al tantalum disposti sul PCB sono in grado di fornire abbastanza energia alla cache DRAM così da memorizzare gli ultimi dati sulla memoria flash NAND. Samsung PM863 offre anche una protezione in caso di surriscaldamento così da assicurare sempre un corretto svolgimento delle operazioni.

All'interno dell'unità sono presenti memorie TLC V-NAND flash 3-bit prodotte da Samsung stessa. Per essere precisi, Samsung utilizza 3D-V-NAND da 32 livelli con densità di 128 Gbit. A conti fatti, su questa unità, troviamo 256GB di spazio su 240 utilizzabile il che significa che l'azienda attua un 7% di overprovisioning. Samsung utilizza il nuovo controller Mercury, il successore dell'ormai famoso MDX utilizzato sulla serie 845DC Evo. Rispetto al controller MDX, il nuovo controller è in grado di gestire un maggiore quantitativo di memoria NAND flash. [/it]

[de]Seite 1 - Einleitung[/de][en]Page 1 - Introduction[/en][fr]Page 1 - Introcution[/fr][it]Pagina 1 - Introduzione[/it] [de]Seite 7 - Zufälliges Lesen KByte/s[/de][en]Page 7 - Random read KByte/s[/en][fr]Page 7 - Lecture Aléatoire KByte/s[/fr][it]Pagina 7 - Lettura Casuale KByte/s[/it]
[de]Seite 2 - Impressionen[/de][en]Page 2 - Impressions[/en][fr]Page 2 - Aperçu[/fr][it]Pagina 2 - Bundle[/it] [de]Seite 8 - Zufälliges Schreiben IOPS[/de][en]Page 8 - Random write IOPS[/en][fr]Page 8 - Écriture Aléatoire IOPS[/fr][it]Pagina 8 - Scrittura Casuale IOPS[/it]
[de]Seite 3 - Wie testen wir?[/de][en]Page 3 - How do we test?[/en][fr]Page 3 - Comment nous testons?[/fr][it]Pagina 3 - Metodologia di test[/it] [de]Seite 9 - Zufälliges LesenIOPS[/de][en]Page 9 - Random read IOPS[/en][fr]Page 9 - Lecture AléatoireIOPS[/fr][it]Pagina 9 - Lettura Casuale IOPS[/it]
[de]Seite 4 - Sequentielles Schreiben KByte/s[/de][en]Page 4 - Sequential write KByte/s[/en][fr]Page 4 - Écriture Séquentielle KByte/s[/fr][it]Pagina 4 - Scrittura Sequenziale KByte/s[/it] [de]Seite 10 - QD1/4/8/16/32[/de][en]Page 10 - QD1/4/8/16/32 Performance[/en][fr]Page 10 - QD1/4/8/16/32 Performance[/fr][it]Pagina 10 - QD1/4/8/16/32 Performance[/it]
[de]Seite 5 - Sequentielles Lesen KByte/s[/de][en]Page 5 - Sequential read KByte/s[/en][fr]Page 5 - Lecture Séquentielle KByte/s[/fr][it]Pagina 5 - Lettura Sequenziale KByte/s[/it] [de]Seite 11 - Fazit[/de][en]Page 11 - Conclusion[/en][fr]Page 11 - Conclusion[/fr][it]Pagina 11 - Conclusioni[/it]
[de]Seite 6 - Zufälliges Schreiben KByte/s[/de][en]Page 6 - Random write KByte/s[/en][fr]Page 6 - Écriture Aléatoire KByte/s[/fr][it]Pagina 6 - Scrittura Casuale Kbyte/s[/it]  




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