Samsung 845DC EVO SSD 960 Gigabyte Review
Published by Marc Büchel on 28.07.14 (9096 reads)
Next to the 845DC PRO Samsung has also launched the 845DC EVO series. This drive is equipped with TLC NAND flash memory chips and therefore it's suitable for read-intensive workloads, preserving precious write cycles. Furthermore TLC NAND allows for highly competitive pricing, which you will get with this drive. Overall we're curious to see how this drive is going to perform.
Specifications / Delivery
Samsung Electronics is finally making a push in the enterprise SSD market whilst also making good headway in the consumer market. First we have the 850 PRO for end-users, then the 845DC PRO and the 845DC EVO enterprise-grade SSDs, which we will be reviewing in this article. In the case of the 850 PRO the most significant upgrade is the NAND Flash, since Samsung is now bringing 3D V-NAND to the mass market, enabling a new level of reliability and endurance. The 845DC EVO is a datacenter optimized SSD with TLC memory, recommended to be used in read-intense environments. You might be asking why Samsung is using TLC NAND in enterprise-grade drives, since P/E-cycle count is much lower than what you get with MLC NAND. As we already mentioned Samsung is targeting read-intensive environments, where P/E-cycle count is secondary if not tertiary.
As already mentioned, Samsung recommends the 845DC EVO for read-intensive environments, therefore sequential as well as random read performance is consitently high, but when it comes to sequential as well as random write performance this drive cannot keep up with the 845DC Pro for instance. In the case of enterprise-grade drives, endurance is usually a main concern. A closer look at rating with the 960 GB 845DC shows a value of 600 TBW, which is just a mere fraction of what you get with the 845DC PRO. What you need to consider with the EVO version is that Samsung is recommending this drive for read-intensive environments, which means write processes aren't of primary concern.
Another necessary feature of an enterprise-grade SSD is data-path-protection in the case of sudden power-loss. For this purpose there is an array of tantalum capacitors ensuring data residing in the volatile 1024 MB DDR3 buffer can be safely written into non-volatile NAND Flash memory.
Samsung is using the MEX controller for the 845DC EVO SSDs. Compared to the older MDX controller, that's also being used on the 845DC PRO, the new model clockes 100 MHz quicker at 400 MHz. Checking what's going on under the hood reveals there is the same ARM Cortex-R4 based controller there was with the predecessor, which features three cores.
Looking at the exterior of the SSDs, the Samsung 845DC EVO is only available in the 2.5 inch form factor with a height of 7 millimeters. The interface is SATA 3.1, and we're curious to see whether Samsung is planning on releasing a SAS version of this drive. This might be a move demanded by the markets, since the majority of datacenters are built upon SAS infrastructure.